ELECTRICAL AND INFRARED SPECTROSCOPIC INVESTIGATIONS OF OXYGEN-RELATED DONORS IN SILICON

Silicon crystals containing up to 1015 cm−3 of „oxygen donors” are investigated by electrical and infrared spectroscopic measurements. The results obtained can be understood phenomenologically by the occurrence of several species of doubly charged donors, whose excited states can be fairly well described by the effective mass approximation, whereas the ground state energies are varying in such a way that, with increasing total donor concentration, species with lower ionization energies are formed at the expense of preceding ones having higher ionization energies. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA