OBSERVATION OF SPIN PRECESSION IN GAAS INVERSION-LAYERS USING ANTILOCALIZATION - COMMENT

被引：32

作者：

SANTOS, PV

CARDONA, M

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.72.432

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：432 / 432

页数：1

共 6 条

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[4] ELECTRONIC-STRUCTURE OF HG1-XCDXTE
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ETIENNE, B
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[6] VOGT P, 1983, J PHYS CHEM SOLIDS, V44, P365