TRANSMISSION ELECTRON-MICROSCOPY AND AUGER-ELECTRON SPECTROSCOPY STUDIES OF BORON IMPLANTED SILICON SINGLE-CRYSTALS

被引：3

作者：

BALL, CAB

AURET, FD

SNYMAN, HC

机构：

[1] UNIV PORT ELIZABETH,DEPT PHYS,PORT ELIZABETH 6000,SOUTH AFRICA

[2] UNIV PORT ELIZABETH,DEPT APPL MATH,PORT ELIZABETH 6000,SOUTH AFRICA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 68卷 / 02期

关键词：

D O I：

10.1002/pssa.2210680225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：545 / 553

页数：9

共 11 条

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[2] Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4
[3] TRANSMISSION ELECTRON-MICROSCOPE IMAGE-CONTRAST OF EPITAXIAL INTERFACES WITH SMALL MISFITS
AURET, FD
BALL, CAB
SNYMAN, HC
[J]. THIN SOLID FILMS, 1979, 61 (03) : 289 - 295
[4] CASEY HC, 1975, POINT DEFECTS SOLIDS, P163
[5] QUANTITATIVE AUGER ANALYSIS OF ION-IMPLANTED BORON AND ARSENIC IN POLYCRYSTALLINE SILICON
FUJIWARA, K
OHTANI, M
KANAYAMA, K
OGATA, H
[J]. SURFACE SCIENCE, 1976, 61 (02) : 435 - 442
[6] GIBBONS JF, 1975, PROJECTED RANGE STAT
[7] GROB JJ, 1976, I PHYS C SER, V28, P24
[8] KUMURA H, 1965, LATTICE DEFECTS QUEN, P319
[9] LECROSNIER DP, 1975, I PHYS C SER, V23, P487
[10] NABARRO FRN, 1967, THEORY CRYSTAL DISLO, P467