TRANSPORT-PROPERTIES OF EXCITONS IN GAAS QUANTUM-WELLS - TIME-RESOLVED RAMAN PROBE

被引：13

作者：

TSEN, KT ^{[1
]}

SANKEY, OF ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 16期

关键词：

D O I：

10.1063/1.104080

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved, space-imaged Raman spectroscopy has been employed to study the transport properties of excitons in GaAs quantum wells. For an injected exciton density of nex approximately-equal-to 1.5×10 11 cm-2, the experimental results show that exciton transport can be well described by a simple diffusion model. Based on the temperature and well-width dependence of the deduced diffusion constant, we demonstrate that at low temperatures, i.e., T ≤60 K, the transport of excitons in GaAs quantum wells is primarily governed by two dominant mechanisms: acoustic phonon scattering and interface roughness scattering.

引用

页码：1666 / 1668

页数：3

共 13 条

[1] STUDIES OF EXCITON LOCALIZATION IN QUANTUM-WELL STRUCTURES BY NONLINEAR-OPTICAL TECHNIQUES [J].