HIGH-POWER (106 MW) CW OPERATION OF TRANSVERSE-MODE STABILIZED INGAAIP LASER-DIODES WITH STRAINED IN0.62GA0.38P ACTIVE LAYER

被引：26

作者：

NITTA, K

ITAYA, K

NISHIKAWA, Y

ISHIKAWA, M

OKAJIMA, M

HATAKOSHI, G

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210, 1, Komukai Toshiba-cho

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 18期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19911037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power CW operation of transverse-mode stabilised InGaAlP laser diodes has been achieved by using a selectively-buried-ridge waveguide structure with a very thin (150 angstrom) active layer. A strained In0.62Ga0.38P active layer was adopted to obtain a sufficient bandgap difference between the active and cladding layers. A maximum light output of 106 mW was obtained from the laser with antireflection and high-reflection coatings.

引用

页码：1660 / 1661

页数：2

共 5 条

[1] ISHIKAWA M, 1987, 19TH C SOL STAT DEV, P115
[2] HIGH-POWER OPERATION OF HETEROBARRIER BLOCKING STRUCTURE INGAAIP VISIBLE-LIGHT LASER-DIODES
ITAYA, K
WATANABE, Y
ISHIKAWA, M
HATAKOSHI, G
UEMATSU, Y
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (18) : 1718 - 1719
[3] ITAYA K, 1990, 22ND C SOL STAT DEV, P565
[4] NITTA K, 1991, IN PRESS APPL PHYS L, V59
[5] CONTINUOUS-WAVE HIGH-POWER (75 MW) OPERATION OF A TRANSVERSE-MODE STABILIZED WINDOW-STRUCTURE 680 NM AIGAINP VISIBLE LASER DIODE
UENO, Y
ENDO, K
FUJII, H
KOBAYASHI, K
HARA, K
YUASA, T
[J]. ELECTRONICS LETTERS, 1990, 26 (20) : 1726 - 1728

← 1 →