THE INFLUENCE OF CARRIER TRAPPING ON DEFECT REACTION ACTIVATION-ENERGY IN SEMICONDUCTORS (PSEUDO-EFFECT OF RECOMBINATION ENHANCED DIFFUSION)

被引：2

作者：

KORSUNSKAYA, NE

MARKEVICH, IV

SHULGA, EP

机构：

[1] Institute of Semiconductors, Ukrainian Academy of Sciences, Kiev

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1992年 / 53卷 / 03期

关键词：

DEFECT REACTIONS; RECOMBINATION ENHANCED DIFFUSION;

D O I：

10.1016/0022-3697(92)90182-D

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Defect reactions caused by the change of interaction between defects due to their recharge after nonequilibrium carrier capture are considered. It is shown that when deep traps are present in semiconductor the kinetics of defect reaction can be controlled by thermal ionization of these traps. In this case illumination (injection) enhanced diffusion, in particular, by the phonon-kick mechanism may be imitated. This is the case which is proved to take place in CdS and CdSSe crystals. Defect drift in an external electric field is proposed as an effective method of defect reaction mechanism investigation.

引用

页码：469 / 474

页数：6

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