TUNNELING ASSISTED THERMIONIC EMISSION IN DOUBLE-BARRIER QUANTUM-WELL STRUCTURES

被引：6

作者：

EHRET, S

SCHNEIDER, H

LARKINS, EC

RALSTON, JD

机构：

[1] Fraunhofer Institut für Angewandte Festkörperphysik, D-79108 Freiburg

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.358783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on experimental and theoretical investigations of the dark current behavior in n-type GaAs/AlAs/Al0.3Ga0.7As double-barrier quantum wells (DBQW). The dark current perpendicular to the 50-period DBQW structures shows evidence of tunneling through the 2-nm-wide AlAs tunnel barriers and thermionic emission across the 25-nm-wide AlGaAs layers. The temperature dependence is in good agreement with our numerical simulations, using an effective escape rate of 2.2×1014 s-1. The dark current is further modified by internal electric fields caused by an asymmetric dopant distribution, which partially arises from a dopant segregation during epitaxial growth. We also present a theoretical simulation showing how the dark current versus voltage dependence is influenced by these space-charge fields. © 1995 American Institute of Physics.

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页码：2537 / 2543

页数：7

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