PD-THIN-SIO2-SI DIODE .2. THEORETICAL MODELING AND THE H-2 RESPONSE

被引：36

作者：

KERAMATI, B ^{[1
]}

ZEMEL, JN ^{[1
]}

机构：

[1] UNIV PENN,MOORE SCH ELECT ENGN,CTR CHEM ELECTR,DEPT ELECT ENGN & SCI,PHILADELPHIA,PA 19104

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

17

引用

收藏

页码：1100 / 1109

页数：10

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