PRASEODYMIUM-OVERLAYER-INDUCED ENHANCEMENT IN OXIDE-GROWTH ON ALUMINUM AND TANTALUM

被引：9

作者：

RAAEN, S

BRAATEN, NA

机构：

[1] Division of Physics, Norwegian Institute of Technology (Norges Tekniske Hogskole), University of Trondheim

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.41.12270

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoelectron spectra have been recorded by use of synchrotron radiation, before and after exposure to oxygen of the Pr/Al and Pr/Ta overlayer systems. Pr is found to react with Al at room temperature to form a thin interface alloy. Pr forms an overlayer when deposited on a Ta substrate. In both cases an enhancement in the initial rate of substrate oxide growth is observed in the presence of Pr. The present work is consistent with previous results obtained on other rare-earth overlayer systems. © 1990 The American Physical Society.

引用

页码：12270 / 12273

页数：4

共 14 条

[1] PHOTOEMISSION-STUDY OF FORMATION AND OXIDATION OF A CERIUM-COPPER INTERFACE [J].