INVESTIGATION OF MONOLAYERS BY SECONDARY ION MASS-SPECTROSCOPY (SIMS)

An apparatus is described for analysis of monolayers on solid targets by the method of secondary ion mass spectroscopy, with primary ion densities in the region of several υA cm-2. The growth and decomposition of copper oxide layers are studied. Secondary ion spectra of amino acids are also obtained, though relatively high primary ion current densities are used. The secondary ion intensities which occur at the beginning of the removal of oxide layers of varying thickness give an indirect means of observing the building up of these layers. It is further shown that the direct observation of the formation of oxide layers on copper is possible at high primary ion current densities using a pulse technique to attain a static SIMS mode. © 1979.