Combining and matching optical, electron-beam, and x-ray lithographies in the fabrication of Si complementary metal-oxide-semiconductor circuits with 0.1 and sub-0.1 mu m features

被引：5

作者：

Yang, IY

Silverman, S

Ferrera, J

Jackson, K

Carter, JM

Antoniadis, DA

Smith, HI

机构：

[1] Massachusetts Inst of Technology, Cambridge

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 06期

关键词：

D O I：

10.1116/1.588257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Combining and matching optical, electron-beam, and x-ray lithographies in the fabrication of Si complementary metal-oxide-semiconductor circuits with 0.1 and sub-0.1 mu m features

引用

页码：2741 / 2744

页数：4

共 2 条

[1] A COMPACT, LOW-COST SYSTEM FOR SUB-100 NM X-RAY-LITHOGRAPHY
MOEL, A
SCHATTENBURG, ML
CARTER, JM
SMITH, HI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06): : 1648 - 1651
[2] HIGH-PERFORMANCE SELF-ALIGNED SUB-100 NM METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING X-RAY-LITHOGRAPHY
YANG, IY
HU, H
SU, LT
WONG, VV
BURKHARDT, M
MOON, EE
CARTER, JM
ANTONIADIS, DA
SMITH, HI
RHEE, KW
CHU, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 4051 - 4054

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