ELECTRO-LUMINESCENT AND PHOTO-LUMINESCENT QUENCHING EFFECTS IMPOSED BY FIELD-INDUCED IONIZATION OF THE EU2+ LUMINESCENT CENTERS IN CAS-EU THIN-FILMS

被引：15

作者：

ANDO, M

ONO, YA

机构：

[1] Hitachi Research Laboratory, Hitachi, Ltd., Hitachi-shi, Ibaraki-ken 319-12

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 10期

关键词：

D O I：

10.1063/1.347617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is found that both the high-field electroluminescent (EL) and photoluminescent intensities of CaS:Eu thin films were quenched by an applied electric field. This quenching was found to be caused by a field-induced ionization of impact-excited Eu2+ luminescent centers. This ionization was known to play an important role in the memory and slow response characteristics of CaS:Eu thin-film electroluminescent devices. Evidence for field-induced ionization of Eu2+ was obtained from the following measurements of CaS:Eu; (i) the first and second EL emission peaks, (ii) photoluminescence, and (iii) photocapacitance.

引用

页码：7225 / 7230

页数：6

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