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A SIMPLE-MODEL FOR THE HYSTERETIC BEHAVIOR OF ZNS-MN THIN-FILM ELECTROLUMINESCENT DEVICES
被引:93
作者
:
HOWARD, WE
论文数:
0
引用数:
0
h-index:
0
HOWARD, WE
SAHNI, O
论文数:
0
引用数:
0
h-index:
0
SAHNI, O
ALT, PM
论文数:
0
引用数:
0
h-index:
0
ALT, PM
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1982年
/ 53卷
/ 01期
关键词
:
D O I
:
10.1063/1.329971
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:639 / 647
页数:9
相关论文
共 18 条
[1]
MEMORY BEHAVIOR OF THIN-FILM ELECTROLUMINESCENT DEVICES
ALT, PM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ALT, PM
HOWARD, WE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
HOWARD, WE
SAHNI, O
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SAHNI, O
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(11)
: 1850
-
1850
[2]
DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
论文数:
0
引用数:
0
h-index:
0
BARAFF, GA
[J].
PHYSICAL REVIEW,
1962,
128
(06):
: 2507
-
&
[3]
POSSIBLE MODEL FOR THIN-FILM AC ELECTROLUMINESCENT DEVICES
CAPE, JA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
CAPE, JA
KETCHPEL, RD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
KETCHPEL, RD
HALE, LG
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
HALE, LG
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(11)
: 1352
-
1352
[4]
ELECTRON-TRANSPORT AND BREAKDOWN IN SIO2
FERRY, DK
论文数:
0
引用数:
0
h-index:
0
FERRY, DK
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(03)
: 1422
-
1427
[5]
LUMINESCENCE AND CONDUCTIVITY INDUCED BY FIELD IONIZATION OF TRAPS
HAERING, RR
论文数:
0
引用数:
0
h-index:
0
HAERING, RR
[J].
CANADIAN JOURNAL OF PHYSICS,
1959,
37
(12)
: 1374
-
1379
[6]
DEVICE CHARACTERISTICS OF PLASMA DISPLAY ELEMENT
JOHNSON, RL
论文数:
0
引用数:
0
h-index:
0
JOHNSON, RL
BITZER, DL
论文数:
0
引用数:
0
h-index:
0
BITZER, DL
SLOTTOW, HG
论文数:
0
引用数:
0
h-index:
0
SLOTTOW, HG
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(09)
: 642
-
&
[7]
HOT-ELECTRON IMPACT EXCITATION OF TB3+ LUMINESCENCE IN ZNS - TB3+ THIN-FILMS
KRUPKA, DC
论文数:
0
引用数:
0
h-index:
0
KRUPKA, DC
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(02)
: 476
-
&
[8]
MEMORY EFFECT OF ZNS-MN AC THIN-FILM ELECTROLUMINESCENCE
MARRELLO, V
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
MARRELLO, V
RUHLE, W
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
RUHLE, W
ONTON, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
ONTON, A
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(07)
: 452
-
454
[9]
DEPENDENCE OF ELECTRO-LUMINESCENCE EFFICIENCY AND MEMORY EFFECT ON MN CONCENTRATION IN ZNS-MN ACTEL DEVICES
MARRELLO, V
论文数:
0
引用数:
0
h-index:
0
MARRELLO, V
ONTON, A
论文数:
0
引用数:
0
h-index:
0
ONTON, A
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(09)
: 1767
-
1770
[10]
AC THIN-FILM ELECTROLUMINESCENCE, FILAMENTARY EMISSION AND ITS MEMORY EFFECT
RUHLE, W
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
RUHLE, W
MARRELLO, V
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
MARRELLO, V
ONTON, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
ONTON, A
[J].
JOURNAL OF LUMINESCENCE,
1979,
18-9
(JAN)
: 729
-
738
←
1
2
→
共 18 条
[1]
MEMORY BEHAVIOR OF THIN-FILM ELECTROLUMINESCENT DEVICES
ALT, PM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
ALT, PM
HOWARD, WE
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
HOWARD, WE
SAHNI, O
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
SAHNI, O
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(11)
: 1850
-
1850
[2]
DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS
BARAFF, GA
论文数:
0
引用数:
0
h-index:
0
BARAFF, GA
[J].
PHYSICAL REVIEW,
1962,
128
(06):
: 2507
-
&
[3]
POSSIBLE MODEL FOR THIN-FILM AC ELECTROLUMINESCENT DEVICES
CAPE, JA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
CAPE, JA
KETCHPEL, RD
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
KETCHPEL, RD
HALE, LG
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
HALE, LG
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(11)
: 1352
-
1352
[4]
ELECTRON-TRANSPORT AND BREAKDOWN IN SIO2
FERRY, DK
论文数:
0
引用数:
0
h-index:
0
FERRY, DK
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(03)
: 1422
-
1427
[5]
LUMINESCENCE AND CONDUCTIVITY INDUCED BY FIELD IONIZATION OF TRAPS
HAERING, RR
论文数:
0
引用数:
0
h-index:
0
HAERING, RR
[J].
CANADIAN JOURNAL OF PHYSICS,
1959,
37
(12)
: 1374
-
1379
[6]
DEVICE CHARACTERISTICS OF PLASMA DISPLAY ELEMENT
JOHNSON, RL
论文数:
0
引用数:
0
h-index:
0
JOHNSON, RL
BITZER, DL
论文数:
0
引用数:
0
h-index:
0
BITZER, DL
SLOTTOW, HG
论文数:
0
引用数:
0
h-index:
0
SLOTTOW, HG
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(09)
: 642
-
&
[7]
HOT-ELECTRON IMPACT EXCITATION OF TB3+ LUMINESCENCE IN ZNS - TB3+ THIN-FILMS
KRUPKA, DC
论文数:
0
引用数:
0
h-index:
0
KRUPKA, DC
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(02)
: 476
-
&
[8]
MEMORY EFFECT OF ZNS-MN AC THIN-FILM ELECTROLUMINESCENCE
MARRELLO, V
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
MARRELLO, V
RUHLE, W
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
RUHLE, W
ONTON, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
ONTON, A
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(07)
: 452
-
454
[9]
DEPENDENCE OF ELECTRO-LUMINESCENCE EFFICIENCY AND MEMORY EFFECT ON MN CONCENTRATION IN ZNS-MN ACTEL DEVICES
MARRELLO, V
论文数:
0
引用数:
0
h-index:
0
MARRELLO, V
ONTON, A
论文数:
0
引用数:
0
h-index:
0
ONTON, A
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(09)
: 1767
-
1770
[10]
AC THIN-FILM ELECTROLUMINESCENCE, FILAMENTARY EMISSION AND ITS MEMORY EFFECT
RUHLE, W
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
RUHLE, W
MARRELLO, V
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
MARRELLO, V
ONTON, A
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,RES LAB,SAN JOSE,CA 95193
IBM CORP,RES LAB,SAN JOSE,CA 95193
ONTON, A
[J].
JOURNAL OF LUMINESCENCE,
1979,
18-9
(JAN)
: 729
-
738
←
1
2
→