CHEMICAL-STATE ANALYSIS OF LIGHT-ELEMENTS BY UNDULATOR-RADIATION-EXCITED X-RAY-FLUORESCENCE

被引：10

作者：

MURAMATSU, Y

OSHIMA, M

KAWAI, J

KATO, H

机构：

[1] RIKEN, INST PHYS & CHEM RES, WAKO, SAITAMA, JAPAN

[2] NATL LAB HIGH ENERGY PHYS, PHOTON FACTORY, TSUKUBA, IBARAKI, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 75卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(93)95714-G

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

An undulator-radiation-excited X-ray fluorescence analysis system has been developed at an undulator beamline of the Photon Factory. As an analytical application demonstrating the capabilities of this system, the chemical state of boron implanted with a high dosage of BF2+ into Si(100) was analyzed by measuring both the B K(alpha) soft X-ray emission (SXE) and X-ray absorption near edge structure (XANES) with fluorescence detection. Comparing the SXE and fluorescence XANES spectra of B doped in Si with relevant reference boron compounds, it is confirmed that the chemical state of the B atoms as implanted in Si is metallic despite the fact that B is implanted as BF2+. Oxidation of B doped in Si by annealing at 900-degrees-C in atmosphere is also observed.

引用

页码：559 / 562

页数：4

共 14 条

[1] EFFECT OF CHEMICAL COMBINATION ON SOFT X-RAY K EMISSION SPECTRUM OF BORON [J].