TRANSIENT ENHANCED DIFFUSION OF ION-IMPLANTED BORON IN SI DURING RAPID THERMAL ANNEALING

被引：46

作者：

MIYAKE, M

AOYAMA, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.339914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1754 / 1757

页数：4

共 11 条

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