PHOTOCAPACITANCE OF MIS STRUCTURE AL-SI3N4-N-GAAS

被引：7

作者：

KLOSE, H

MARONCHUK, YE

SENOSHENKO, OV

机构：

[1] VEB, WERK FERNSEH ELEKTR, BERLIN, EAST GERMANY

[2] ACAD SCI USSR, SEMICONDUCTOR PHYS INST, NOVOSIBIRSK, USSR

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 21卷 / 02期

关键词：

D O I：

10.1002/pssa.2210210231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：659 / 664

页数：6

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[3]

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[4]

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[5]

SEKI H, 1972, REV ELEC COMMUN LAB, V20, P810

[6]

SENOSHENKO OV, 1973, IZV VUZOV MOSKVA, V5, P59

[7]

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