TEMPERATURE ANOMALIES OF SCHOTTKY-BARRIER DIODES ON N-TYPE SILICON

被引：5

作者：

JAGER, D ^{[1
]}

KASSING, R ^{[1
]}

机构：

[1] UNIV MUNSTER, INST APPL PHYS, D-4400 MUNSTER, GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.323401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4413 / 4414

页数：2

相关论文

共 12 条

[1] RICHARDSON CONSTANT OF AL-GAAS AND AU-GAAS SCHOTTKY-BARRIER DIODES
BORREGO, JM
GUTMANN, RJ
ASHOK, S
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (03) : 169 - 172
[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[3] PHYSICAL SIGNIFICANCE OF TO ANOMALIES IN SCHOTTKY BARRIERS
CROWELL, CR
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (03) : 171 - 175
[4] ELECTRICAL PROPERTIES OF NICKEL-LOW-DOPED N-TYPE GALLIUM-ARSENIDE SCHOTTKY-BARRIER DIODES
HACKAM, R
HARROP, P
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) : 1231 - +
[5] EFFECT OF DEEP IMPURITY LEVELS ON SCHOTTKY-BARRIER DIODE CHARACTERISTICS
KOROL, AN
KITSAI, MY
STRIKHA, VI
SHEKA, DI
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (05) : 375 - 379
[6] SCHOTTKY-BARRIER ANOMALIES AND INTERFACE STATES
LEVINE, JD
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (10) : 3991 - +
[7] EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS
PADOVANI, FA
SUMNER, GG
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3744 - &
[8] PADOVANI FA, 1971, SEMICONDUCTOR SEMI A, V7
[9] PADVOANI FA, 1967, J APPL PHYS, V38, P891
[10] DETAILED ANALYSIS OF METAL-SEMICONDUCTOR CONTACT
PELLEGRINI, B
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (03) : 217 - 237