OPTICAL AND TRANSPORT PROPERTIES OF HIGH QUALITY CRYSTALS OF V2O4 NEAR METALLIC TRANSITION TEMPERATURE

被引：204

作者：

LADD, LA

PAUL, W

机构：

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 04期

关键词：

D O I：

10.1016/0038-1098(69)90888-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

High quality crystals of V2O4 have been grown which have a change in resistivity of a factor of 105 at 339°K. The temperature dependence of the absorption edge is found to be twice as large as for semiconductor such as germanium. The dependence of the transition temperature and semiconducting resistivity upon uniaxial stress and hydrostatic pressure has been determined. © 1969.

引用

页码：425 / &

共 5 条

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ADLER, D
FEINLEIB, J
BROOKS, H
PAUL, W
[J]. PHYSICAL REVIEW, 1967, 155 (03): : 851 - +
[2] ADLER D, 1968, SOLID STATE PHYSICS, V21
[3] ADLER DH, IN PRESS
[4] SEMICONDUCTOR-TO-METAL TRANSITION IN V2O3
FEINLEIB, J
PAUL, W
[J]. PHYSICAL REVIEW, 1967, 155 (03): : 841 - +
[5] EFFECT OF PRESSURE ON METAL-TO-INSULATOR TRANSITION IN V2O4 + V2O3
MINOMURA, S
NAGASAKI, H
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (01) : 131 - +

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