PARTICLE SIMULATIONS OF THE SEMICONDUCTOR BOLTZMANN-EQUATION FOR ONE-DIMENSIONAL INHOMOGENEOUS STRUCTURES

This paper deals with the first application of the weighted particle method to the inhomogeneous semiconductor Boltzmann equation. In this method, the collision term is treated in a deterministic way. In a previous paper we reported the application of this method to a homogeneous case. This paper gives a detailed analysis of the inhomogeneous case. In particular, we investigate three different methods to perform the coupling of the particles trajectories with the Poisson equation. Two test problems are considered. The first one is "slightly inhomogeneous" and concerns damped plasma oscillations. The second one is "strongly" inhomogeneous and consists in the modelling of a one-dimensional N+-N--N+ structure, with a sharp doping discontinuity. © 1990.