BALLISTIC ELECTRONS IN A SUB-MICRON STRUCTURE - THE DISTRIBUTION FUNCTION AND 2 VALLEY EFFECTS

被引:7
作者
BARANGER, HU
WILKINS, JW
机构
来源
PHYSICA B & C | 1985年 / 134卷 / 1-3期
关键词
D O I
10.1016/0378-4363(85)90389-4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:470 / 474
页数:5
相关论文
共 14 条
[1]  
ABRAMOWITZ M, 1964, HDB MATH FUNCTIONS, P295
[2]   GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].
ASPNES, DE .
PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343
[3]   BALLISTIC ELECTRONS IN AN INHOMOGENEOUS SUB-MICRON STRUCTURE - THERMAL AND CONTACT EFFECTS [J].
BARANGER, HU ;
WILKINS, JW .
PHYSICAL REVIEW B, 1984, 30 (12) :7349-7351
[4]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[5]   COMPUTER-SIMULATION OF TRANSFERRED ELECTRON DEVICES USING DISPLACED MAXWELLIAN APPROACH [J].
BOSCH, R ;
THIM, HW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :16-25
[6]   DIFFUSION EFFECTS AND BALLISTIC TRANSPORT [J].
COOK, RK ;
FREY, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :951-953
[7]   BALLISTIC AND OVERSHOOT ELECTRON-TRANSPORT IN BULK SEMICONDUCTORS AND IN SUBMICRONIC DEVICES [J].
GHIS, A ;
CONSTANT, E ;
BOITTIAUX, B .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :214-221
[8]   THE ROLE OF BOUNDARIES ON HIGH-SPEED COMPOUND SEMICONDUCTOR-DEVICES [J].
GRUBIN, HL ;
KRESKOVSKY, JP .
SURFACE SCIENCE, 1983, 132 (1-3) :594-622
[9]  
HESTO P, 1983, SURF SCI, V132, P632
[10]   MEASUREMENT OF J/V CHARACTERISTICS OF A GAAS SUB-MICRON N+-N--N+ DIODE [J].
HOLLIS, MA ;
EASTMAN, LF ;
WOOD, CEC .
ELECTRONICS LETTERS, 1982, 18 (13) :570-572