THE ROLE OF BOUNDARIES ON HIGH-SPEED COMPOUND SEMICONDUCTOR-DEVICES

被引:4
作者
GRUBIN, HL
KRESKOVSKY, JP
机构
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D O I
10.1016/0039-6028(83)90563-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
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页码:594 / 622
页数:29
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共 33 条
[1]   THE USE OF GAAS-(GA, AL)AS HETEROSTRUCTURES FOR FET DEVICES [J].
BOCCONGIBOD, D ;
ANDRE, JP ;
BAUDET, P ;
HALLAIS, JP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1141-1147
[2]   INFLUENCE OF BOUNDARY CONDITIONS ON HIGH-FIELD DOMAINS IN GUNN DIODES [J].
BOER, KW ;
DOHLER, G .
PHYSICAL REVIEW, 1969, 186 (03) :793-&
[3]  
BOER KW, 1969, Z PHYSIK, V155, P170
[4]   COMPUTER-SIMULATION OF TRANSFERRED ELECTRON DEVICES USING DISPLACED MAXWELLIAN APPROACH [J].
BOSCH, R ;
THIM, HW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) :16-25
[5]  
COLLIVER DJ, 1973, I PHYS C SER, V17, P286
[6]   BOUNDARY CONDITIONS AND HIGH-FIELD DOMAINS IN GAAS [J].
CONWELL, EM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) :262-+
[7]   CHARGE CONTROL OF THE HETEROJUNCTION TWO-DIMENSIONAL ELECTRON-GAS FOR MESFET APPLICATION [J].
DELAGEBEAUDEUF, D ;
LINH, NT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :790-795
[8]  
FAUGEMBERG B, UNPUB 1982 P WORKSH
[9]  
GREENE RF, UNPUB 1982 P WORKSH
[10]  
GRUBIN H, 1979, 1979 P INT EL DEV M, P394