A SIMPLE-MODEL OF ION-IMPLANTED JFETS VALID IN BOTH THE QUADRATIC AND THE SUBTHRESHOLD REGIONS

被引：18

作者：

SANSEN, WMC

DAS, CJM

机构：

来源：

关键词：

D O I：

10.1109/JSSC.1982.1051794

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：658 / 666

页数：9

共 18 条

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