27 GBIT/S ALGAAS GAAS HBT 1-2 REGENERATING DEMULTIPLEXER IC

被引：4

作者：

RUNGE, K ^{[1
]}

GIMLETT, JL ^{[1
]}

NUBLING, RB ^{[1
]}

WANG, KC ^{[1
]}

CHANG, MF ^{[1
]}

PIERSON, RL ^{[1
]}

ASBECK, PM ^{[1
]}

机构：

[1] ROCKWELL INT CORP,INT SCI CTR,THOUSAND OAKS,CA 91360

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 25期

关键词：

DEMULTIPLEXERS; INTEGRATED CIRCUITS; DIGITAL COMMUNICATIONS;

D O I：

10.1049/el:19911478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An experimental 27 Gbit/s 1:2 regenerating demultiplexer IC based on AlGaAs/GaAs HBTs has been implemented, which features an input sensitivity of 55 mV peak to peak and a phase margin of 270-degrees at the SONET STS-192 rate of 9.95 Gbit/s. The circuit was fabricated in a high current gain baseline HBT technology, and occupies an area of 1.15 x 1 mm2.

引用

页码：2389 / 2391

页数：3

共 6 条

[1]

CHEUNG NK, 1990, WF1 OFC PAP

[2]

DANIEL D, OFC 92

[3] 24 GBIT/S REGENERATING DEMULTIPLEXER IC IN SILICON BIPOLAR TECHNOLOGY [J].