24 GBIT/S REGENERATING DEMULTIPLEXER IC IN SILICON BIPOLAR TECHNOLOGY

被引：8

作者：

HAUENSCHILD, J ^{[1
]}

REIN, HM ^{[1
]}

MCFARLAND, W ^{[1
]}

PETTENGILL, D ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 06期

关键词：

DEMULTIPLEXERS; BIPOLAR DEVICES;

D O I：

10.1049/el:19910316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1:2 regenerating demultiplexer IC has been realised in an advanced selfaligned silicon bipolar technology using 0.8-mu-m lithography. The circuit can be operated up to 24Gbit/s at 5 V supply voltage. This is by far the highest data rate reported for a demultiplexer in any IC technology.

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收藏

页码：502 / 504

页数：3

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