SUITABILITY OF PRESENT SILICON BIPOLAR IC TECHNOLOGIES FOR OPTICAL FIBER TRANSMISSION RATES AROUND AND ABOVE 10 GBIT/S

被引:7
作者
REIN, HM
HAUENSCHILD, J
机构
来源
IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS | 1990年 / 137卷 / 04期
关键词
D O I
10.1049/ip-g-2.1990.0039
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The work is intended to give system designers an impression of the bit rates that will be achievable with the various electronic components of future optical fibre transmission systems if silicon bipolar technologies are applied. To this end, basic ICs were simulated and designed on the basis of a state-of-the-art laboratory technology. As has already been shown in an earlier work, there is a large variation in maximum achievable speeds between the different electronic components, but most of them are expected to work at 10 Gbit/s some of them even at 20 Gbit/s and above. The mose problematic component in 10 Gbit/s long-haul trunk lines will be the preamplifier because of the high-sensitivity (i.e. low-noise) requirements. The modelling and design techniques used were successfully checked by comparing the simulated and measured results of a static 15 GHz frequency divider produced with the same technology.
引用
收藏
页码:251 / 260
页数:10
相关论文
共 37 条
[1]   11.4 GBIT/S MULTIPLEXER IC EMPLOYING SUB-MICRON SI BIPOLAR TECHNOLOGY FOR USE IN FUTURE BROAD-BAND TELECOMMUNICATIONS SYSTEMS [J].
BAGHERI, M ;
HOLDEN, WS .
ELECTRONICS LETTERS, 1989, 25 (21) :1422-1424
[2]  
CLAWIN D, 1987, IEEE J LT, V5, P348
[3]   7.3-GHZ DYNAMIC FREQUENCY-DIVIDERS MONOLITHICALLY INTEGRATED IN A STANDARD BIPOLAR TECHNOLOGY [J].
DERKSEN, RH ;
REIN, HM .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (03) :537-541
[4]  
Feher K., 1983, DIGITAL COMMUNICATIO
[5]   VERSATILE SILICON BIPOLAR XOR GATE FOR SIGNAL-PROCESSING UP TO 8 GBIT/S [J].
HAUENSCHILD, J ;
REIN, HM ;
SCHMIDT, L ;
WORNER, K .
ELECTRONICS LETTERS, 1990, 26 (02) :114-115
[6]   10 GBIT/S MONOLITHIC INTEGRATED BIPOLAR DEMULTIPLEXER FOR OPTICAL-FIBRE TRANSMISSION-SYSTEMS FABRICATED IN BICMOS TECHNOLOGY [J].
HAUENSCHILD, J ;
REIN, HM ;
WEGER, P ;
KLOSE, H .
ELECTRONICS LETTERS, 1989, 25 (12) :782-783
[7]  
HAUENSCHILD J, 1989, SEP ESSCIRC 89 C P V, P226
[8]  
HAVENSCHILD J, 1990, IEEE J SC, V25, P763
[9]  
IBE H, 1988, ECOC 88, P495
[10]  
ICHINO H, 1988, 1988 P IEEE BIP CIRC, P15