VERSATILE SILICON BIPOLAR XOR GATE FOR SIGNAL-PROCESSING UP TO 8 GBIT/S

被引：3

作者：

HAUENSCHILD, J ^{[1
]}

REIN, HM ^{[1
]}

SCHMIDT, L ^{[1
]}

WORNER, K ^{[1
]}

机构：

[1] TELEFUNKEN ELECTR GMBH,W-7100 HEILBRONN,GERMANY

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 02期

关键词：

Bipolar devices; Integrated circuits; Logic circuits; Silicon;

D O I：

10.1049/el:19900078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-speed XOR gate is described, which is well suited for several applications. The circuit was fabricated with a 1·25μm double-polysilicon bipolar technology. It operates up to at least 8 Gbit/s, which is by far the highest operating speed reported so far for bipolar XOR gates. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：114 / 115

页数：2

共 5 条

[1]

FLUGE M, 1989, ELECTRON LETT, V25, P44, DOI 10.1049/el:19890032

[2]

HAUENSCHILD J, 1989, SEP ESSCIRC 89 C P V, P226

[3] MULTI-GIGABIT-PER-SECOND SILICON BIPOLAR ICS FOR FUTURE OPTICAL-FIBER TRANSMISSION-SYSTEMS [J].