A HIGH-SPEED BIPOLAR TECHNOLOGY FEATURING SELF-ALIGNED SINGLE-POLY BASE AND SUBMICROMETER EMITTER CONTACTS

被引：22

作者：

HUANG, WM ^{[1
]}

DROWLEY, CI ^{[1
]}

VANDEVOORDE, PJ ^{[1
]}

PETTENGILL, D ^{[1
]}

TURNER, JE ^{[1
]}

KAPOOR, AK ^{[1
]}

LIN, CH ^{[1
]}

BURTON, G ^{[1
]}

ROSNER, SJ ^{[1
]}

BRIGHAM, K ^{[1
]}

FU, HS ^{[1
]}

OH, SY ^{[1
]}

SCOTT, MP ^{[1
]}

CHIANG, SY ^{[1
]}

WANG, A ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 09期

关键词：

D O I：

10.1109/55.62973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental results are presented for a new high-performance silicon bipolar transistor structure utilizing a single layer of polysilicon for both the base and emitter contacts. This structure, called STRIPE (for self-aligned trench-isolated polysilicon electrodes), provides a 0.2−μm emitter / base polysilicon contact separation. A 0.4−μm emitter width is achieved with conventional 0.8−μm optical lithography. These dimensions are the smallest achieved in single-poly structures with polysilicon base contacts, and are comparable to those achieved in double-poly structures. Using the STRIPE structure, transistors have been fabricated with fT as high as 33.8 GHz. © 1990 IEEE

引用

页码：412 / 414

页数：3

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