A 20-PS SI BIPOLAR IC USING ADVANCED SUPER SELF-ALIGNED PROCESS TECHNOLOGY WITH COLLECTOR ION-IMPLANTATION

被引：38

作者：

KONAKA, S

YAMAMOTO, E

SAKUMA, K

AMEMIYA, Y

SAKAI, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 07期

关键词：

D O I：

10.1109/16.30943

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1370 / 1375

页数：6

共 11 条

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[3] A 30-PS SI BIPOLAR IC USING SUPER SELF-ALIGNED PROCESS TECHNOLOGY [J].

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[7] GIGABIT LOGIC BIPOLAR TECHNOLOGY - ADVANCED SUPER SELF-ALIGNED PROCESS TECHNOLOGY [J].

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[8]

SAKAI T, 1985, IEDM DEC, P85

[9] A NEW SELF-ALIGNED PLANAR OXIDATION TECHNOLOGY [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) :1503-1507

[10]

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