20 GBIT/S TIME-DIVISION MULTIPLEXER IC IN SILICON BIPOLAR TECHNOLOGY

被引:10
作者
HAUENSCHILD, J [1 ]
REIN, HM [1 ]
MCFARLAND, W [1 ]
DOERNBERG, J [1 ]
PETTENGILL, D [1 ]
机构
[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304
关键词
Bipolar devices; Multiplexers;
D O I
10.1049/el:19901167
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high-speed 2: 1 timedivision multiplexer (MUX) IC has been realised in an advanced self-aligned silicon bipolar technology using 0.8 µm lithography. The circuit can be operated up to ZOGbit/s at 5V supply voltage. This is by far the highest bit rate reported for a MUX in any IC technology. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码:1824 / 1826
页数:3
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