PHOTOLUMINESCENCE FROM ELECTRON-HOLE PLASMAS CONFINED IN SI/SI1-XGEX/SI QUANTUM-WELLS

被引：53

作者：

XIAO, X ^{[1
]}

LIU, CW ^{[1
]}

STURM, JC ^{[1
]}

LENCHYSHYN, LC ^{[1
]}

THEWALT, MLW ^{[1
]}

机构：

[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 14期

关键词：

D O I：

10.1063/1.107196

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first observation of photoluminescence from electron-hole plasmas in Si/Si0.8Ge0.2/Si quantum wells. While at liquid helium temperature, luminescence due to shallow bound excitons is observed. At 77 K electron-hole plasma (EHP) luminescence dominates the spectra over a wide range of pump powers. Convolution of the occupied electron and hole densities of states gives an excellent fit to the photoluminescence line shape. A band-gap reduction of up to 15 meV at high carrier densities is observed for wide quantum wells, but no such shift is detected for narrow quantum wells.

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页码：1720 / 1722

页数：3

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