A COMBINED USE OF SIMS AND RBS TECHNIQUES FOR THE INVESTIGATION OF SIC AND SICN FILMS

被引：6

作者：

CACCAVALE, F

BRUSATIN, G

KLEPS, I

机构：

[1] UNIV PADUA,DIPARTIMENTO INGN MECCAN,I-35131 PADUA,ITALY

[2] RES INST ELECTR COMPONENTS,R-72996 BUCHAREST,ROMANIA

来源：

APPLIED SURFACE SCIENCE | 1994年 / 81卷 / 04期

关键词：

D O I：

10.1016/0169-4332(94)90049-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A combined SIMS-RBS analysis of the compositional modifications of SiC/Si and SiCN/Si films under various deposition conditions and subsequent treatments is presented. The use of a simulation program of the RBS spectra on the basis of the SIMS profiles allows interfacial matrix effects to be probed. Moreover, this method leads to a fully quantitative depth-profiling of complex systems.

引用

页码：443 / 447

页数：5