REACTIVE ION ETCH PROCESS WITH HIGHLY CONTROLLABLE GAAS-TO-ALGAAS SELECTIVITY USING SF6 AND SICL4

被引：40

作者：

SALIMIAN, S

COOPER, CB

NORTON, R

BACON, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 14期

关键词：

D O I：

10.1063/1.98747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1083 / 1085

页数：3

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