CALCULATIONS OF ENERGY-BANDS AND OPTICAL-PROPERTIES OF SOLID-STATE SUPERLATTICE MATERIALS

The calculational results of the electronic and optical properties of some III-V semiconductor compounds obtained from the pseudopotential energy band method are compared with results obtained from other energy band calculational techniques and with experiments are compared. The calculation of real and imaginary parts of the optical refractive index of the GaAs-AlAs superlattice shows good agreement with experimental data. The calculations of the energy gap as a function of the number of atomic layers were carried out for GaAs-AlAs and GaSb InAs superlattices. The result obtained from these calculations shows that it is about 10 to 15% below the existing experimental data. However, if the band gap of experimental data is correctly normalized to the correct room temperature value, our calculations show excellent agreement with experimental data. Comparison of the results obtained from our calculations concerning the charge density and the charge confinement are carried out with the results obtained from other energy band calculation techniques.