ON THE REMOVAL OF INSULATOR PROCESS INDUCED RADIATION-DAMAGE FROM INSULATED GATE FIELD-EFFECT TRANSISTORS AT ELEVATED PRESSURE

被引：19

作者：

REISMAN, A

AITKEN, JM

RAY, AK

BERKENBLIT, M

MERZ, CJ

HAVRELUK, RP

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 07期

关键词：

D O I：

10.1149/1.2127693

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1616 / 1619

页数：4

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