CHARGE-CARRIER COLLECTION BY SUPERCONDUCTING TRANSITION-EDGE SENSORS DEPOSITED ON SILICON

被引：9

作者：

DOUGHERTY, BL

CABRERA, B

LEE, AT

PENN, MJ

YOUNG, BA

PRONKO, JG

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,CTR PARTICLE ASTROPHYS,BERKELEY,CA 94720

[2] LOCKHEED MISSILES & SPACE CO INC,DIV RES & DEV,PALO ALTO,CA 94304

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1993年 / 333卷 / 2-3期

关键词：

D O I：

10.1016/0168-9002(93)91193-Q

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct ''modes'', distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons and holes.

引用

页码：464 / 468

页数：5

共 9 条

[1]

ABAKUMOV VN, 1978, SOV PHYS SEMICOND+, V12, P1

[2]

BRON WE, 1985, NATO ASI SERIES B, V124

[3] MEASUREMENTS OF IONIZATION PRODUCED IN SILICON-CRYSTALS BY LOW-ENERGY SILICON ATOMS [J].