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A MODEL OF CURRENT VOLTAGE CHARACTERISTICS IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
被引:37
作者
:
SERIKAWA, T
论文数:
0
引用数:
0
h-index:
0
SERIKAWA, T
SHIRAI, S
论文数:
0
引用数:
0
h-index:
0
SHIRAI, S
OKAMOTO, A
论文数:
0
引用数:
0
h-index:
0
OKAMOTO, A
SUYAMA, S
论文数:
0
引用数:
0
h-index:
0
SUYAMA, S
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1987年
/ 34卷
/ 02期
关键词
:
D O I
:
10.1109/T-ED.1987.22925
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:321 / 324
页数:4
相关论文
共 14 条
[1]
MODELING OF ACCUMULATION-MODE MOSFETS IN POLYSILICON THIN-FILMS
[J].
AHMED, SS
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,DALLAS,TX 75265
AHMED, SS
;
KIM, DM
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,DALLAS,TX 75265
KIM, DM
;
SHICHIJO, H
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,DALLAS,TX 75265
SHICHIJO, H
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(06)
:313
-315
[2]
THEORY OF THIN-FILM TRANSISTOR
[J].
ANDERSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
IMPERIAL COLL,DEPT ELECT ENGN,MAT SECT,LONDON SW7 2BT,ENGLAND
IMPERIAL COLL,DEPT ELECT ENGN,MAT SECT,LONDON SW7 2BT,ENGLAND
ANDERSON, JC
.
THIN SOLID FILMS,
1976,
38
(02)
:151
-161
[3]
BAUDRAND H, 1982, SOLID STATE ELECTRON, V24, P1093
[4]
THE THIN-FILM TRANSISTOR - A LATE FLOWERING BLOOM
[J].
BRODY, TP
论文数:
0
引用数:
0
h-index:
0
BRODY, TP
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(11)
:1614
-1628
[5]
ENHANCED CONDUCTIVITY IN PLASMA-HYDROGENATED POLYSILICON FILMS
[J].
CAMPBELL, DR
论文数:
0
引用数:
0
h-index:
0
CAMPBELL, DR
.
APPLIED PHYSICS LETTERS,
1980,
36
(07)
:604
-606
[6]
FIELD-EFFECT IN LARGE GRAIN POLYCRYSTALLINE SILICON
[J].
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
ECOLE CENT LYON, F-69130 ECULLY, FRANCE
ECOLE CENT LYON, F-69130 ECULLY, FRANCE
COLINGE, JP
;
MOREL, H
论文数:
0
引用数:
0
h-index:
0
机构:
ECOLE CENT LYON, F-69130 ECULLY, FRANCE
ECOLE CENT LYON, F-69130 ECULLY, FRANCE
MOREL, H
;
CHANTE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
ECOLE CENT LYON, F-69130 ECULLY, FRANCE
ECOLE CENT LYON, F-69130 ECULLY, FRANCE
CHANTE, JP
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(03)
:197
-201
[7]
EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS
[J].
FOSSUM, JG
论文数:
0
引用数:
0
h-index:
0
FOSSUM, JG
;
ORTIZCONDE, A
论文数:
0
引用数:
0
h-index:
0
ORTIZCONDE, A
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(08)
:933
-940
[8]
ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS
[J].
FOSSUM, JG
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
FOSSUM, JG
;
ORTIZCONDE, A
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
ORTIZCONDE, A
;
SHICHIJO, H
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
SHICHIJO, H
;
BANERJEE, SK
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
BANERJEE, SK
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(09)
:1878
-1884
[9]
CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS
[J].
LEVINSON, J
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
LEVINSON, J
;
SHEPHERD, FR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
SHEPHERD, FR
;
SCANLON, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
SCANLON, PJ
;
WESTWOOD, WD
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
WESTWOOD, WD
;
ESTE, G
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
ESTE, G
;
RIDER, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
RIDER, M
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(02)
:1193
-1202
[10]
CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON
[J].
MALHI, SDS
论文数:
0
引用数:
0
h-index:
0
MALHI, SDS
;
SHICHIJO, H
论文数:
0
引用数:
0
h-index:
0
SHICHIJO, H
;
BANERJEE, SK
论文数:
0
引用数:
0
h-index:
0
BANERJEE, SK
;
SUNDARESAN, R
论文数:
0
引用数:
0
h-index:
0
SUNDARESAN, R
;
ELAHY, M
论文数:
0
引用数:
0
h-index:
0
ELAHY, M
;
POLLACK, GP
论文数:
0
引用数:
0
h-index:
0
POLLACK, GP
;
RICHARDSON, WF
论文数:
0
引用数:
0
h-index:
0
RICHARDSON, WF
;
SHAH, AH
论文数:
0
引用数:
0
h-index:
0
SHAH, AH
;
HITE, LR
论文数:
0
引用数:
0
h-index:
0
HITE, LR
;
WOMACK, RH
论文数:
0
引用数:
0
h-index:
0
WOMACK, RH
;
CHATTERJEE, PK
论文数:
0
引用数:
0
h-index:
0
CHATTERJEE, PK
;
LAM, HW
论文数:
0
引用数:
0
h-index:
0
LAM, HW
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
:258
-281
←
1
2
→
共 14 条
[1]
MODELING OF ACCUMULATION-MODE MOSFETS IN POLYSILICON THIN-FILMS
[J].
AHMED, SS
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,DALLAS,TX 75265
AHMED, SS
;
KIM, DM
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,DALLAS,TX 75265
KIM, DM
;
SHICHIJO, H
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,DALLAS,TX 75265
SHICHIJO, H
.
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(06)
:313
-315
[2]
THEORY OF THIN-FILM TRANSISTOR
[J].
ANDERSON, JC
论文数:
0
引用数:
0
h-index:
0
机构:
IMPERIAL COLL,DEPT ELECT ENGN,MAT SECT,LONDON SW7 2BT,ENGLAND
IMPERIAL COLL,DEPT ELECT ENGN,MAT SECT,LONDON SW7 2BT,ENGLAND
ANDERSON, JC
.
THIN SOLID FILMS,
1976,
38
(02)
:151
-161
[3]
BAUDRAND H, 1982, SOLID STATE ELECTRON, V24, P1093
[4]
THE THIN-FILM TRANSISTOR - A LATE FLOWERING BLOOM
[J].
BRODY, TP
论文数:
0
引用数:
0
h-index:
0
BRODY, TP
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(11)
:1614
-1628
[5]
ENHANCED CONDUCTIVITY IN PLASMA-HYDROGENATED POLYSILICON FILMS
[J].
CAMPBELL, DR
论文数:
0
引用数:
0
h-index:
0
CAMPBELL, DR
.
APPLIED PHYSICS LETTERS,
1980,
36
(07)
:604
-606
[6]
FIELD-EFFECT IN LARGE GRAIN POLYCRYSTALLINE SILICON
[J].
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
ECOLE CENT LYON, F-69130 ECULLY, FRANCE
ECOLE CENT LYON, F-69130 ECULLY, FRANCE
COLINGE, JP
;
MOREL, H
论文数:
0
引用数:
0
h-index:
0
机构:
ECOLE CENT LYON, F-69130 ECULLY, FRANCE
ECOLE CENT LYON, F-69130 ECULLY, FRANCE
MOREL, H
;
CHANTE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
ECOLE CENT LYON, F-69130 ECULLY, FRANCE
ECOLE CENT LYON, F-69130 ECULLY, FRANCE
CHANTE, JP
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(03)
:197
-201
[7]
EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS
[J].
FOSSUM, JG
论文数:
0
引用数:
0
h-index:
0
FOSSUM, JG
;
ORTIZCONDE, A
论文数:
0
引用数:
0
h-index:
0
ORTIZCONDE, A
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(08)
:933
-940
[8]
ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS
[J].
FOSSUM, JG
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
FOSSUM, JG
;
ORTIZCONDE, A
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
ORTIZCONDE, A
;
SHICHIJO, H
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
SHICHIJO, H
;
BANERJEE, SK
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
BANERJEE, SK
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(09)
:1878
-1884
[9]
CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS
[J].
LEVINSON, J
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
LEVINSON, J
;
SHEPHERD, FR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
SHEPHERD, FR
;
SCANLON, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
SCANLON, PJ
;
WESTWOOD, WD
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
WESTWOOD, WD
;
ESTE, G
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
ESTE, G
;
RIDER, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
BELL NO RES, OTTAWA K1Y 4H7, ONTARIO, CANADA
RIDER, M
.
JOURNAL OF APPLIED PHYSICS,
1982,
53
(02)
:1193
-1202
[10]
CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON
[J].
MALHI, SDS
论文数:
0
引用数:
0
h-index:
0
MALHI, SDS
;
SHICHIJO, H
论文数:
0
引用数:
0
h-index:
0
SHICHIJO, H
;
BANERJEE, SK
论文数:
0
引用数:
0
h-index:
0
BANERJEE, SK
;
SUNDARESAN, R
论文数:
0
引用数:
0
h-index:
0
SUNDARESAN, R
;
ELAHY, M
论文数:
0
引用数:
0
h-index:
0
ELAHY, M
;
POLLACK, GP
论文数:
0
引用数:
0
h-index:
0
POLLACK, GP
;
RICHARDSON, WF
论文数:
0
引用数:
0
h-index:
0
RICHARDSON, WF
;
SHAH, AH
论文数:
0
引用数:
0
h-index:
0
SHAH, AH
;
HITE, LR
论文数:
0
引用数:
0
h-index:
0
HITE, LR
;
WOMACK, RH
论文数:
0
引用数:
0
h-index:
0
WOMACK, RH
;
CHATTERJEE, PK
论文数:
0
引用数:
0
h-index:
0
CHATTERJEE, PK
;
LAM, HW
论文数:
0
引用数:
0
h-index:
0
LAM, HW
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(02)
:258
-281
←
1
2
→