MICROWAVE BARITT DIODE WITH RETARDING-FIELD - INVESTIGATION

被引：5

作者：

EKNOYAN, O

SZE, SM

YANG, ES

机构：

[1] TEXAS A&M UNIV,INST SOLID STATE ELECTR,DEPT ELECT ENGN,COLLEGE STN,TX 77843

[2] NATL TAIWAN UNIV,DEPT ELECT ENGN,TAIPEI,TAIWAN

[3] COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 04期

关键词：

D O I：

10.1016/0038-1101(77)90109-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：285 / 289

页数：5

共 25 条

[1]

Abramowitz M., 1964, HDB MATHEMATICAL FUN, P319

[2] MICROWAVE OSCILLATIONS IN PNP REACH-THROUGH BARITT DIODES [J].

CHU, JL ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1973, 16 (01) :85-91

[3]

CHU JL, 1972, J APPL PHYS, V43, P5310

[4]

Coleman D. J. Jr., 1971, Bell System Technical Journal, V50, P1695

[5]

COLEMAN DJ, 1971, JUN IEEE DEV RES C A

[6]

COLEMAN JD, 1972, J APPL PHYS, V43, P3510

[7] IMPROVED EFFICIENCY MICROWAVE BARITT OSCILLATORS BY DELAYED INJECTION [J].

EKNOYAN, O ;

SZE, SM ;

YANG, ES ;

RYDER, RM .

PROCEEDINGS OF THE IEEE, 1975, 63 (11) :1620-1621

[8] MULTILAYERED ION-IMPLANTED BARITT DIODES WITH IMPROVED EFFICIENCY [J].

EKNOYAN, O ;

YANG, ES ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1977, 20 (04) :291-295

[9]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[10]

KWOCK SP, 1974, IEEE ISSCC DIGEST TE, P180

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