MICROWAVE OSCILLATIONS IN PNP REACH-THROUGH BARITT DIODES

被引：13

作者：

CHU, JL ^{[1
]}

SZE, SM ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 01期

关键词：

D O I：

10.1016/0038-1101(73)90128-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：85 / 91

页数：7

共 11 条

[1] THERMIONIC INJECTION AND SPACE-CHARGE-LIMITED CURRENT IN REACH-THROUGH P+NP+ STRUCTURES [J].

CHU, JL ;

SZE, SM ;

PERSKY, G .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3510-&

[2]

CHU JL, 1971, IEEE INT ELECTRON DE

[3]

Coleman D. J. Jr., 1971, Bell System Technical Journal, V50, P1695

[4] TRANSIT-TIME OSCILLATIONS IN BARITT DIODES [J].

COLEMAN, DJ .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1812-&

[5]

DUNN CN, 1969, IEEE T MICROW THEORY, VMT17, P691

[6] NOISE MEASURE OF METAL-SEMI-CONDUCTOR-METAL SCHOTTKY-BARRIER MICROWAVE DIODES [J].

HAUS, HA ;

STATZ, H ;

PUCEL, RA .

ELECTRONICS LETTERS, 1971, 7 (22) :667-&

[7] CIRCUIT FOR TESTING HIGH-EFFICIENCY IMPATT DIODES [J].

IGLESIAS, DE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (11) :2065-&

[8]

LEE CA, 1971, IEEE INT ELECTRON DE

[9]

LIU SG, 1971, IEEE INT ELECTRON DE

[10] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR-METAL (MSM) STRUCTURES [J].

SZE, SM ;

COLEMAN, DJ ;

LOYA, A .

SOLID-STATE ELECTRONICS, 1971, 14 (12) :1209-&

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