EFFECT OF BULK MICRODEFECTS INDUCED IN HEAT-TREATED CZOCHRALSKI SILICON ON DIELECTRIC-BREAKDOWN OF THERMAL SIO2-FILMS

被引：21

作者：

SATOH, Y

MURAKAMI, Y

FURUYA, H

SHINGYOUJI, T

机构：

[1] Central Research Institute, Mitsubishi Materials Corporation, Omiya, Saitama 330

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.111186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine the effect of bulk microdefects (BMD) intentionally introduced in Czochralski silicon substrates by heat treatment on the dielectric breakdown of thermally grown SiO2 films. Transmission electron microscope observations reveal that the BMD consist of oxygen precipitates, perfect dislocation loops, and faulted dislocation loops. When the BMD are incorporated into the SiO2 film during thermal oxidation, an apparent decrease in the breakdown field is observed. The size of the oxygen precipitates has a clear relationship with the breakdown field: larger oxygen precipitate causes greater degradation. The dislocation loops are unrelated to the breakdown field.

引用

页码：303 / 305

页数：3