HOT-CARRIER EFFECTS IN 1.3-MU IN1-XGAXASYP1-Y LIGHT-EMITTING-DIODES

被引：38

作者：

SHAH, J ^{[1
]}

LEHENY, RF ^{[1
]}

NAHORY, RE ^{[1
]}

TEMKIN, H ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 08期

关键词：

D O I：

10.1063/1.92823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：618 / 620

页数：3

相关论文

共 9 条

[1] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION
ADAMS, AR
ASADA, M
SUEMATSU, Y
ARAI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L621 - L624
[2] DEVOLDERE P, 1980, 4TH IEEE SPEC CENF T
[3] GOODFELLOW RC, 1979, 1979 DEV RES C
[4] MEASUREMENT OF GAIN AND ABSORPTION-SPECTRA IN ALGAAS BURIED HETEROSTRUCTURE LASERS
HENRY, CH
LOGAN, RA
MERRITT, FR
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3042 - 3050
[5] NELSON RJ, 1980, 1980 INT S GAAS REL
[6] SHAH J, 1978, SOLID STATE ELECTRON, V21, P43, DOI 10.1016/0038-1101(78)90113-2
[7] HOT-CARRIER RELAXATION IN PHOTO-EXCITED IN-0.53 GA-0.47 AS
SHAH, J
LEHENY, RF
NAHORY, RE
POLLACK, MA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (05) : 475 - 477
[8] THOMPSON GHB, 1980, 7TH IEEE INT SEM LAS
[9] NONRADIATIVE RECOMBINATION IN INGAASP-INP LIGHT-SOURCES CAUSING LIGHT-EMITTING DIODE OUTPUT SATURATION AND STRONG LASER-THRESHOLD-CURRENT TEMPERATURE SENSITIVITY
UJI, T
IWAMOTO, K
LANG, R
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 193 - 195