NONRADIATIVE RECOMBINATION IN INGAASP-INP LIGHT-SOURCES CAUSING LIGHT-EMITTING DIODE OUTPUT SATURATION AND STRONG LASER-THRESHOLD-CURRENT TEMPERATURE SENSITIVITY

被引：73

作者：

UJI, T

IWAMOTO, K

LANG, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 04期

关键词：

D O I：

10.1063/1.92317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：193 / 195

页数：3

相关论文

共 9 条

[1] ADAMS AR, 1980, I ELECTRON COMMU OQE, V80, P55
[2] CASEY HC, 1978, HETEROSTRUCTURE LA A, pCH4
[3] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERS
ETTENBERG, M
NUESE, CJ
KRESSEL, H
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2949 - 2950
[4] GOODFELLOW RC, 1979, JUN DEV RES C
[5] CARRIER DENSITY DEPENDENCE OF AUGER RECOMBINATION
HAUG, A
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1281 - 1284
[6] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
HORIKOSHI, Y
FURUKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) : 809 - 815
[7] CALCULATED SPECTRAL DEPENDENCE OF GAIN IN EXCITED GAAS
STERN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5382 - 5386
[8] NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS
THOMPSON, GHB
HENSHALL, GD
[J]. ELECTRONICS LETTERS, 1980, 16 (01) : 42 - 44
[9] IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES
YAMAMOTO, T
SAKAI, K
AKIBA, S
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) : 95 - 98