PULSED EXCIMER (KRF) LASER-INDUCED CRYSTALLIZATION OF PBZR0.44TI0.56O3 AMORPHOUS FILMS

Amorphous PZT thin films 600 nm thick were rf sputtered from a PbZr0.44Ti0.56O3 ceramic target with excess PbO onto glass substrates maintained at room temperature. After irradiation with a 248 nm KrF pulsed excimer laser with a power density of 2.3×107W/m2 at a frequency of 50 Hz and a pulsed width of 30 ns for 2 min, the films crystallized into the PZT perovskite structure to a depth of about 120 nm. Comparisons of this work with PZT crystallization obtained from a traditional oven and 488 nm Ar+ laser postdeposition treatments are also given.© 1995 American Institute of Physics.