THE ELECTRONIC-STRUCTURE OF SILICON-NITRIDE

被引：25

作者：

SOKEL, RJ

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(80)90035-9

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：899 / 906

页数：8

共 13 条

[1] [Anonymous], ELECTRONIC STRUCTURE
[2] ELECTRON-STATES IN ALPHA-QUARTZ - SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION
CHELIKOWSKY, JR
SCHLUTER, M
[J]. PHYSICAL REVIEW B, 1977, 15 (08): : 4020 - 4029
[3] DIMARIA DJ, 1975, APPL PHYS LETT, V27, P34
[4] Harrison W.A., 1977, FESTKORPERPROBLEME, V17, P135
[5] Harrison WA., 1978, PHYS SIO2 ITS INTERF, P105
[6] STRUCTURE OF ALPHA-SILICON NITRIDE
MARCHAND, R
LAURENT, Y
LAND, J
[J]. ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL CRYSTALLOGRAPHY AND CRYSTAL CHEMISTRY, 1969, B 25 : 2157 - &
[7] STRUCTURE OF VITREOUS SILICA
MOZZI, RL
WARREN, BE
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1969, 2 : 164 - &
[8] ELECTRONIC-STRUCTURE, SPECTRA, AND PROPERTIES OF 4=2-COORDINATED MATERIALS .1. CRYSTALLINE AND AMORPHOUS SIO-2 AND GEO-2
PANTELIDES, ST
HARRISON, WA
[J]. PHYSICAL REVIEW B, 1976, 13 (06): : 2667 - 2691
[9] OPTICAL-ABSORPTION AND PHOTOCONDUCTIVITY IN THERMALLY GROWN SIO2-FILMS
POWELL, RJ
MORAD, M
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2499 - 2502
[10] CHEMICALLY BOUND HYDROGEN IN CVD SI3N4 - DEPENDENCE ON NH3/SIH4 RATIO AND ON ANNEALING
STEIN, HJ
WEGENER, HAR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 908 - 912