NEW JUNCTION LASER RESONANT STRUCTURES

被引:8
作者
GARFINKEL, M
ENGELER, WE
LOCKE, DJ
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10.1063/1.1702857
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O59 [应用物理学];
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页码:2321 / &
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[1]  
CARLSON RF, PRIVATE COMMUNICATIO
[2]   QUANTUM EFFICIENCY OF GAAS INJECTION LASERS [J].
CHEROFF, G ;
STERN, F ;
TRIEBWASSER, S .
APPLIED PHYSICS LETTERS, 1963, 2 (09) :173-174
[3]  
DILL FH, 1963, INTERNATIONAL SOLID
[4]   CHARACTERISTICS OF CONTINOUS HIGH-POWER GAAS JUNCTION LASER [J].
ENGELER, WE ;
GARFINKEL, M .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1734-&
[5]   EFFICIENCY MEASUREMENTS ON GAAS ELECTROLUMINESCENT DIODES [J].
GALGINAITIS, SV .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :295-&
[6]   COHERENT LIGHT EMISSION FROM GAAS JUNCTIONS [J].
HALL, RN ;
CARLSON, RO ;
SOLTYS, TJ ;
FENNER, GE ;
KINGSLEY, JD .
PHYSICAL REVIEW LETTERS, 1962, 9 (09) :366-&
[7]  
HALL RN, 1963, SOLID STATE ELECTRON, V6, P403
[8]  
KINGSLEY JD, 1963, B AM PHYS SOC, V8, P87
[9]   DIRECTIONALITY EFFECTS OF GAAS LIGHT-EMITTING DIODES .2. [J].
LAFF, RA ;
DUMKE, WP ;
DILL, FH ;
BURNS, G .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :63-65
[10]   SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].
LASHER, G ;
STERN, F .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&