THERMAL-ANALYSIS OF P-N-JUNCTION SECOND BREAKDOWN INITIATION

[1] MEASUREMENT OF P-N JUNCTION SECOND BREAKDOWN CHARACTERISTICS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1971, 31 (02) : 127 - +

[2] Carslaw H. S., 1959, CONDUCTION HEAT SOLI

[3] FORD GM, 1963, SOLID STATE DESIGN, V4, P29

[4] SPREADING RESISTANCE IN CYLINDRICAL SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1490 - 1497

[5] ANALYSIS OF TRANSISTOR SECOND BREAKDOWN [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1969, 116 (08): : 1345 - +

[6] SECONDARY BREAKDOWN IN TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (04) : 439 - &

[7] MORTENSEN RE, 1957, P I RADIO ENGRS, V45, P504

[8] SECOND BREAKDOWN IN FORWARD AND REVERSE BASE CURRENT REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 655 - &

[9] STRICKLAND PR, 1961, IBM J RES DEV, V3, P1490

[10] SZE SM, 1969, PHYSICS SEMICONDUCTO

[1] MEASUREMENT OF P-N JUNCTION SECOND BREAKDOWN CHARACTERISTICS [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1971, 31 (02) : 127 - +

[2] Carslaw H. S., 1959, CONDUCTION HEAT SOLI

[3] FORD GM, 1963, SOLID STATE DESIGN, V4, P29

[4] SPREADING RESISTANCE IN CYLINDRICAL SEMICONDUCTOR DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1490 - 1497

[5] ANALYSIS OF TRANSISTOR SECOND BREAKDOWN [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1969, 116 (08): : 1345 - +

[6] SECONDARY BREAKDOWN IN TRANSISTORS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (04) : 439 - &

[7] MORTENSEN RE, 1957, P I RADIO ENGRS, V45, P504

[8] SECOND BREAKDOWN IN FORWARD AND REVERSE BASE CURRENT REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 655 - &

[9] STRICKLAND PR, 1961, IBM J RES DEV, V3, P1490

[10] SZE SM, 1969, PHYSICS SEMICONDUCTO