ON THE NATURE OF THE DEFECT REVERSE ANNEALING IN ION-IMPLANTED SILICON

被引：3

作者：

DVURECHENSKY, AV

RYAZANTSEV, IA

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 46卷 / 3-4期

关键词：

D O I：

10.1080/00337578008209161

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：129 / 132

页数：4

共 18 条

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[2]

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[4]

DEMIDOV ES, 1977, FIZ TEKH POLUPROV, V11, P782

[5] DEFECT ANNEALING IN POLYCRYSTALLINE SILICON FILMS [J].

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GERASIMENKO, NN ;

POTAPOVA, LP .

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[6]

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[7]

Gerasimenko N. N., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P1700

[8]

GERASIMENKO NN, 1972, SOV PHYS SEMICOND+, V5, P1487

[9] EFFECTS OF ANNEALING ON GAP STATES IN AMORPHOUS SI FILMS [J].

HASEGAWA, S ;

YAZAKI, S ;

SHIMIZU, T .

SOLID STATE COMMUNICATIONS, 1978, 26 (07) :407-410

[10] CONNECTION BETWEEN ESR AND ELECTRICAL-CONDUCTION IN AMORPHOUS SI FILMS [J].

HASEGAWA, S ;

YAZAKI, S .

SOLID STATE COMMUNICATIONS, 1977, 23 (01) :41-44

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