CHARACTERISTICS OF JUNCTIONS IN GERMANIUM

[1] Dember H, 1931, PHYS Z, V32, P554

[2] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872

[3] FLETCHER NH, 1957, J ELECTRON, V2, P610

[4] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[5] USE OF INFRARED ABSORPTION IN GERMANIUM TO DETERMINE CARRIER DISTRIBUTIONS FOR INJECTION AND EXTRACTION [J]. PHYSICAL REVIEW, 1956, 103 (05): : 1173 - 1181

[6] LIFETIME MEASUREMENTS OF EXCESS CARRIERS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (12) : 1439 - 1442

[7] EMITTER EFFICIENCY OF JUNCTION TRANSISTOR [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1955, 10 (05) : 362 - 367

[8] OPTICAL STUDIES OF INJECTED CARRIERS .1. INFRARED ABSORPTION IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (06): : 1311 - 1312

[9] INFLUENCE OF ELECTRIC FIELD IN DIFFUSION REGION UPON BREAKDOWN IN GERMANIUM N-P JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (04) : 459 - 466

[10] EXTENSION OF THE THEORY OF THE JUNCTION TRANSISTOR [J]. PHYSICAL REVIEW, 1954, 94 (05): : 1161 - 1171

[1] Dember H, 1931, PHYS Z, V32, P554

[2] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872

[3] FLETCHER NH, 1957, J ELECTRON, V2, P610

[4] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[5] USE OF INFRARED ABSORPTION IN GERMANIUM TO DETERMINE CARRIER DISTRIBUTIONS FOR INJECTION AND EXTRACTION [J]. PHYSICAL REVIEW, 1956, 103 (05): : 1173 - 1181

[6] LIFETIME MEASUREMENTS OF EXCESS CARRIERS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (12) : 1439 - 1442

[7] EMITTER EFFICIENCY OF JUNCTION TRANSISTOR [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1955, 10 (05) : 362 - 367

[8] OPTICAL STUDIES OF INJECTED CARRIERS .1. INFRARED ABSORPTION IN GERMANIUM [J]. PHYSICAL REVIEW, 1953, 91 (06): : 1311 - 1312

[9] INFLUENCE OF ELECTRIC FIELD IN DIFFUSION REGION UPON BREAKDOWN IN GERMANIUM N-P JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (04) : 459 - 466

[10] EXTENSION OF THE THEORY OF THE JUNCTION TRANSISTOR [J]. PHYSICAL REVIEW, 1954, 94 (05): : 1161 - 1171