STARK-LADDER TRANSITIONS IN GAAS/ALGAAS SUPERLATTICES

被引：12

作者：

YAMAGUCHI, M

MORIFUJI, M

KUBO, H

TANIGUCHI, K

HAMAGUCHI, C

GMACHL, C

GORNIK, E

机构：

[1] VIENNA TECH UNIV,INST FESTKORPERELEKRON,A-1040 VIENNA,AUSTRIA

[2] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90309-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electroreflectance measurements have been carried out in order to investigate Stark-ladder transitions in a GaAs(40 angstrom)/AlGaAs(20 angstrom) superlattice under various uniform electric fields, and compared with the transition energies calculated on the basis of a microscopic tight-binding description. The observed electroreflectance spectra in a wide range of energies (1.5-2.2 eV) shift in proportion to an applied electric field. The signals in the higher photon energy region (1.9-2.2 eV) indicate an existence of the transition from the spin-orbit split-off band in the valence band to the Wannier-Stark localization states in the conduction band. The assignment is supported by the tight-binding calculation. The resonant couplings of the localized states are also observed.

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页码：839 / 842

页数：4

相关论文

共 10 条

[1] ELECTRIC-FIELD INDUCED LOCALIZATION AND OSCILLATORY ELECTRO-OPTICAL PROPERTIES OF SEMICONDUCTOR SUPERLATTICES [J].

BLEUSE, J ;

BASTARD, G ;

VOISIN, P .

PHYSICAL REVIEW LETTERS, 1988, 60 (03) :220-223

[2] SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1977, 16 (02) :790-796

[3] EXCITONIC EFFECTS IN COUPLED QUANTUM-WELLS [J].

FOX, AM ;

MILLER, DAB ;

LIVESCU, G ;

CUNNINGHAM, JE ;

JAN, WY .

PHYSICAL REVIEW B, 1991, 44 (12) :6231-6242

[4] ROOM-TEMPERATURE OBSERVATION OF STARK LADDER FORMATION IN A SHORT-PERIOD GAAS/ALAS SUPERLATTICE UNDER AN ELECTRIC-FIELD [J].

FUJIWARA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (10) :L1718-L1720

[5] STARK LOCALIZATION IN GAAS-GAALAS SUPERLATTICES UNDER AN ELECTRIC-FIELD [J].

MENDEZ, EE ;

AGULLORUEDA, F ;

HONG, JM .

PHYSICAL REVIEW LETTERS, 1988, 60 (23) :2426-2429

[6] ELECTRONIC BAND-STRUCTURE OF SUPERLATTICES UNDER A UNIFORM ELECTRIC-FIELD AND WANNIER-STARK EFFECT [J].

MORIFUJI, M ;

NISHIKAWA, Y ;

HAMAGUCHI, C ;

FUJII, T .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (08) :1047-1051

[7] ELECTROREFLECTANCE DETECTION OF RESONANT COUPLING BETWEEN WANNIER-STARK LOCALIZATION STATES IN A GAAS/ALAS SUPERLATTICE [J].

NAKAYAMA, M ;

TANAKA, I ;

NISHIMURA, H ;

KAWASHIMA, K ;

FUJIWARA, K .

PHYSICAL REVIEW B, 1991, 44 (11) :5935-5938

[8] ELECTROREFLECTANCE INTENSITY FOR RESONANT COUPLING BETWEEN WANNIER-STARK LOCALIZATION STATES IN A GAAS ALAS SUPERLATTICE [J].

TANAKA, I ;

NAKAYAMA, M ;

NISHIMURA, H ;

KAWASHIMA, K ;

FUJIWARA, K .

PHYSICAL REVIEW B, 1992, 46 (12) :7656-7661

[9] A SEMI-EMPIRICAL TIGHT-BINDING THEORY OF THE ELECTRONIC-STRUCTURE OF SEMICONDUCTORS [J].

VOGL, P ;

HJALMARSON, HP ;

DOW, JD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (05) :365-378

[10] OBSERVATION OF THE WANNIER-STARK QUANTIZATION IN A SEMICONDUCTOR SUPERLATTICE [J].

VOISIN, P ;

BLEUSE, J ;

BOUCHE, C ;

GAILLARD, S ;

ALIBERT, C ;

REGRENY, A .

PHYSICAL REVIEW LETTERS, 1988, 61 (14) :1639-1642