A GALLIUM ARSENIDE DOUBLE INFECTION DIODE

被引：8

作者：

SAUNDERS, IJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1968年 / 11卷 / 12期

关键词：

D O I：

10.1016/0038-1101(68)90007-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1165 / &

共 16 条

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[6]

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[7] DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J].

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[8]

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[9] DOUBLE INJECTION IN INSULATORS [J].

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[10] EFFECT OF LIGHT ON POPULATION OF RECOMBINATION CENTERS IN STRUCTURES EXHIBITING DOUBLE INJECTION (77DEGREESK PHOTOCONDUCTIVITY NEGATIVE RESISTANCE SI P-PI-N T/E) [J].

MARSH, OJ ;

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