TEMPERATURE-DEPENDENCE OF THE DIRECT BAND-GAP OF INXGA1-XAS (X=0.06 AND 0.15)

被引：69

作者：

HANG, Z

YAN, D

POLLAK, FH

PETTIT, GD

WOODALL, JM

机构：

[1] CUNY GRAD SCH & UNIV CTR,NEW YORK,NY 10036

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.44.10546

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoreflectance has been used to measure the direct band gap of InxGa1-xAs (x = 0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the band gap and broadening function.

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页码：10546 / 10550

页数：5

相关论文

共 29 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] THEORY OF THE TEMPERATURE-DEPENDENCE OF THE DIRECT GAP OF GERMANIUM [J].

ALLEN, PB ;

CARDONA, M .

PHYSICAL REVIEW B, 1981, 23 (04) :1495-1505

[3]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[4] ELECTROMODULATION SPECTROSCOPY OF CONFINED SYSTEMS [J].

GLEMBOCKI, OJ ;

SHANABROOK, BV .

SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (04) :603-607

[5] TEMPERATURE-DEPENDENCE OF THE SHIFTS AND BROADENINGS OF THE CRITICAL-POINTS IN GAAS [J].

GOPALAN, S ;

LAUTENSCHLAGER, P ;

CARDONA, M .

PHYSICAL REVIEW B, 1987, 35 (11) :5577-5584

[6] TEMPERATURE-DEPENDENCE OF THE E0 AND E0 + DELTA-0 GAPS OF INP UP TO 600-DEGREES-C [J].

HANG, Z ;

SHEN, H ;

POLLAK, FH .

SOLID STATE COMMUNICATIONS, 1990, 73 (01) :15-18

[7]

HANG Z, 1990, P SOC PHOTO-OPT INS, V1285, P14, DOI 10.1117/12.20802

[8]

HANG Z, UNPUB

[9]

KYSER DS, 1970, SOLID STATE COMMUN, V8, P1937

[10] TEMPERATURE-DEPENDENCE OF THE INTERBAND CRITICAL-POINT PARAMETERS OF INP [J].

LAUTENSCHLAGER, P ;

GARRIGA, M ;

CARDONA, M .

PHYSICAL REVIEW B, 1987, 36 (09) :4813-4820